demonstrated metallic characteristics and Fabry–Pérot oscillation phenomena in graphene. Later, by applying the tight-binding calculation, Bahamon et al. Following this study, a valley filter, based on line defects scattering in graphene, was introduced by Gunlycke et al. They found that one-dimensionally extended defects could be used as metallic wire. Applying defects and divacancies in a pristine sheet creates a 5–8–5 line defect. The first experimental report of the extended line defect (ELD), which was studied through alternating Stone–Thrower–Wales defects, was presented by Lahiri et al. By studying the grain boundaries in graphite, extended line defects become visible in the STM analysis. The electrical and thermal conductivity decrease with grain boundaries in materials. One controlled defect in graphene are grain boundaries. These defects play a remarkable role in graphene and nano-structured devices. Consequently, topological defects such as vacancies, impurities, adatoms and Stone–Wales defects are the best candidates for changing the hexagon structure of graphene with acceptable C–C distances and angles for sp 2 hybridization. In order to modify the transport behavior, the physical structure of graphene needs to be changed. ![]() The electronic properties of graphene are the result of its particular structure. However, the very large off-current of graphene at room temperature, which is associated with the small band gap, renders it incapable of being integrated as a building block for pure carbon-based transistor devices. Furthermore, the high carrier mobility and velocity of graphene is utilized in ballistic and high switching speeds devices. The properties of graphene such ultra-thin body properties for optimum electrostatic scaling and excellent thermal conductivity has made it a potential alternative to silicon and facilitated the manufacture of devices. Graphene, a two-dimensional allotrope of carbon with the thickness of one atom, has attracted the attention of researchers because of its unique electronic transport properties.
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